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Overcoming Gate Oxide Scaling Challenges in Semiconductor Reliability Testing
Overcoming Gate Oxide Scaling Challenges in Semi. Reliability Testing
Available on demand
This technical seminar continues the discussion of reliability issues begun in the previous seminar,
New Measurement Techniques for Improving Semi. Device Reliability
. It addresses test issues associated with gate oxide scaling and how these issues drive the need for higher volumes of test data earlier in the technology development cycle.
In this seminar, you will learn and understand:
Issues and findings related to gate oxide scaling including:
Soft breakdown
Progressive breakdown
Charge trapping
How the issues related to gate oxide scaling drive the need for high volumes of data earlier in the development process
How TDDB and NBTI testing create challenges for traditional stress-measure testing architectures
How switchless parallel test architectures address the new test challenges
This seminar is recommended for engineers, students, researchers, and scientists in areas such as device reliability, new materials development, device characterization, and modeling who wish to learn how to use electrical measurements to gain a better understanding of emerging issues related to device performance and reliability.
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