Automated Production RF-CV Measurements of Advanced Gates Dielectrics for 65nm Node and Beyond
Document Actions
This presentation is not available for download, but you can request a live presentation by clicking here.
This is the first in a series of seminars on issues and implementation of Capacitance-Voltage measurements at Radio Frequency (RFCV) in production environments for monitoring process variation of ultra-thin gate dielectrics at the 65nm node and lower.
Characterizing ultra-thin gate oxides electrically using the traditional multi-frequency capacitance-voltage (MFCV) method has become increasingly challenging due to excessive leakage current. While emerging measurement techniques, such as RFCV, are sufficiently sensitive, they are often viewed as unrepeatable, so complex that they require the services of an RF specialist, and too difficult to implement in a lights-out, production process control environment. This seminar shows how a mature 3rd-generation on-wafer production RF test capability can be used in production and development for accurate extraction of equivalent oxide thickness (EOT).
By participating in this seminar, you will learn and understand:
Yuegang Zhao, the lead applications engineer in Keithley's semiconductor group, will present the seminar.
This is the first in a series of seminars on issues and implementation of Capacitance-Voltage measurements at Radio Frequency (RFCV) in production environments for monitoring process variation of ultra-thin gate dielectrics at the 65nm node and lower.
Characterizing ultra-thin gate oxides electrically using the traditional multi-frequency capacitance-voltage (MFCV) method has become increasingly challenging due to excessive leakage current. While emerging measurement techniques, such as RFCV, are sufficiently sensitive, they are often viewed as unrepeatable, so complex that they require the services of an RF specialist, and too difficult to implement in a lights-out, production process control environment. This seminar shows how a mature 3rd-generation on-wafer production RF test capability can be used in production and development for accurate extraction of equivalent oxide thickness (EOT).
By participating in this seminar, you will learn and understand:
- Issues related to the traditional MFCV method on ultra-thin gate oxide, including the:
- Effect of contact resistance
- Effect of channel resistance
- Effect of cabling
- Effect of the chuck and other sources of parasitic capacitance - Techniques for capacitance measurement at radio frequency
- Test structure considerations and guidelines - EOT extraction from the MOS small signal model, including de-embedding
- Optimal frequency selection
- Equivalent circuit selection
- Typical results and a comparison with the results from the MFCV method
Yuegang Zhao, the lead applications engineer in Keithley's semiconductor group, will present the seminar.
page updated: 2007-01-05